BondLib.Electrical.Analog.Spice.Utilities.DjD

# .BondLib.Electrical.Analog.Spice.Utilities.DjD

Spice-style DIODE model

## Information

This model computes the diodic current of a Spice-style DIODE model. Spice offers three modeling levels for DIODEs that differ in the formulae they use to compute the diodic current [1]. The Level=1 model and the Level=3 model represent junction diodes, whereas the Level=2 model represents a Fowler-Nordheim diode, essentially a non-linear resistor with a quadratic conductance characteristic.

    Parameters:

     Level:   DIODE modeling level (default value = 1)
                Level=1: Non-geometric junction diode
                Level=2: Fowler-Nordheim diode
                Level=3: Geometric junction diode

     Tnom:    Reference temperature (default value = 300.15 K)

     IS:      Saturation current at reference temperature (default value = 1e-14 Amp)

     N:       Current mission coefficient (default value = 1)

     EG:      Energy gap for temperature effect on saturation current at 0 K (default value = 1.11 Volt)

     XTI:     Temperature exponent of saturation current (default value = 3)

     BV:      Reverse breakdown voltage at reference temperature (default value = 0 Volt)

     IBV:     Reverse breakdown current (default value = 0 Amp)

     TCV:     Linear temperature coefficient of breakdown voltage (default value = 0 V/K)

     ISW:     Saturation current of perimeter at reference temperature (default value = 0 Amp)

     TOX:     Thin oxide thickness (default value = 1e-7 m)

     Area:    Relative area occupied by the diode (default value = 1)

     PJ:      Relative perimeter width (default value = 1)

     EMin:    if x < EMin, the exp(x) function is linearized (default value = -100)

     EMax:    if x > EMax, the exp(x) function is linearized (default value = 40)

     L:       Diode length (default value = 0 m)

     W:       Diode width (default value = 0 m)

     M:       Diode multiplier (default value = 1)

     JS:      Saturation current density at reference temperature (default value = 1e-4 Amp/m2)

     JSW:     Saturation current density of perimeter at reference temperature (default value = 0 Amp/m2)

     JF:       Forward Fowler-Nordheim current coefficient (default value = 0 A/V2)

     JR:       Reverse Fowler-Nordheim current coefficient (default value = 0 A/V2)

     EF:       Forward Fowler-Nordheim critical electrical field (default value = 0 V/m)

     ER:       Reverse Fowler-Nordheim critical electrical field (default value = 0 V/m)

References:

1. Massobrio, G. and P. Antognetti (1993), Semiconductor Device Modeling with Spice, 2nd edition, McGraw Hill, New York, p.200.

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