BondLib.Electrical.Analog.Spice.Mp

# .BondLib.Electrical.Analog.Spice.Mp

Spice-style PMOS transistor

## Information

The Spice-style p-channel MOSFET model contains the internal MOSFET plus the three external gate capacitances and the drain and source resistances.

The heating port may remain unconnected, in which case the device is being simulated at a constant temperature of Tnom.

    Parameters:

     Level:   MOSFET modeling level (default value = 1)
                Level=0: Static injection model
                Level=1: Shichman-Hodges model
                Level=2: Grove-Frohman model
                Level=3: Empirical model
                Level=4: Simplified Grove-Frohman model

    Basic Geometric Parameters:

     L:       Channel length (default value = 1e-4 m) Levels 0-4

     W:       Channel width (default value = 1e-4 m) Levels 0-4

    Basic Process Parameters:

     TPG:     Type of gate material (default value = 1) Levels 0-4
                TPG = 0:  Aluminum gate
                TPG = 1:  Polysilicon gate

     TOX:     Thin oxide thickness (default value = 1e-7 m) Levels 0-4

     COX:     Specific capacitance of SiO2 (default value = 0 F/m2) Levels 0-4

     NSUB:    Substrate doping (default value = 0 1/m3) Levels 0-4

    Basic Electrical Parameters:

     U0:      Surface mobility at reference temperature (default value = 0 m2/(V*s)) Levels 0-4

     VT0:     Zero-bias threshold voltage (default value = 0 Volt) Levels 0,1
                VT0 < 0 for enhancement MOSFET
                VT0 > 0 for depletion MOSFET

     LAMBDA:  Channel length modulation  (default value = 0 1/Volt) Levels 0-4

     LD:      Lateral diffusion (default value = 0 m) Levels 0-4

     WD:      Width diffusion (default value = 0 m) Levels 0-4

     KP:      Transconductance parameter at reference temperature (default value = 0 Amp/Volt2) Levels 0-4

     GAMMA:   Body-effect parameter (default value = 0 Volt0.5) Levels 0-4

     PHI:     Surface inversion potential at reference temperature (default value = 0 Volt) Levels 0-4

     NSS:     Surface state density (default value = 0 1/m2) Levels 0-4

    Basic Temperature Compensation Parameters:

     Tnom:    Reference temperature (default value = 300.15 K) Levels 0-4

     EG:      Energy gap for temperature effect on saturation current at 0 K (default value = 1.11 Volt) Levels 0-4

    Level=1 Electrical Parameters:

     AD:      Drain diffusion area (default value = 0 m2) Levels 1-4

     PD:      Drain perimeter width (default value = 0 m) Levels 1-4

     AS:      Source diffusion area (default value = 0 m2) Levels 1-4

     PS:      Source perimeter width (default value = 0 m) Levels 1-4

     ISD:     Drain junction saturation current at reference temperature (default value = 0 Amp) Levels 1-4

     ISS:     Source junction saturation current at reference temperature (default value = 0 Amp) Levels 1-4

     JS:      Transport saturation current density (default value = 0 Amp/m2) Levels 1-4

     PB:      Built-in potential at reference temperature (default value = 0.8 Volt) Levels 1-4

    Level=1 Parasitic Resistor Parameters:

     RD:      Drain Ohmic resistance (default value = 1 Ohm) Levels 1-4

     RS:      Source Ohmic resistance (default value = 1 Ohm) Levels 1-4

    Level=1 Junction Capacitance Parameters:

     CJ:      Zero-bias bulk capacitance per square meter at reference temperature (default value = 0 F/m2) Levels 1-4

     MJ:      Bulk junction grading coefficient (default value = 0.33) Levels 1-4

     CJSW:    Zero-bias perimeter capacitance per meter at reference temperature (default value = 1e-9 F/m) Levels 1-4

     MJSW:    Perimeter capacitance grading coefficient (default value = 0.33) Levels 1-4

     FC:      Forward-bias depletion capacitance coefficient (default value = 0.5) Levels 1-4

     CGB0:    Gate-bulk overlap capacitance per meter (default value = 0 F/m) Levels 1-4

     CGD0:    Gate-drain overlap capacitance per meter (default value = 0 F/m) Levels 1-4

     CGS0:    Gate-source overlap capacitance per meter (default value = 0 F/m) Levels 1-4

    Level=1 Temperature Compensation Parameters:

     TRD1:    Linear temperature coefficient of drain resistance (default value = 0 1/K) Levels 1-4

     TRD2:    Quadratic temperature coefficient of drain resistance (default value = 0 1/K2) Levels 1-4

     TRS1:    Linear temperature coefficient of source resistance (default value = 0 1/K) Levels 1-4

     TRS2:    Quadratic temperature coefficient of source resistance (default value = 0 1/K2) Levels 1-4

    Level=2 Process Parameters:

     XJ:      Metallurgical Junction Depth (default value = 0 m) Levels 2-4

    Level=2 Electrical Parameters:

     UCRIT:   Critical electric field for mobility (default value = 1e6 V/m) Levels 2,4

     UEXP:    Exponential coefficient for mobility (default value = 0) Levels 2,4

     UTRA:    Transverse field coefficient (default value = 0) Levels 2,4

     ECRIT:   Critical electric field for pinch-off (default value = 0 V/m) Levels 2,4

     DELTA:   Width effect on threshold voltage (default value = 0) Levels 2-4

     VMAX:    Maximum drift velocity of carriers (default value = 0 m/s) Levels 2-4
                VMAX = 0: Frohman-Grove model of drain current computation (Levels 2,4)
                VMAX > 0: Baum-Beneking model of drain current computation (Levels 2,4)

     NFS:     Surface fast state density (default value = 0 1/m2) Levels 2-4

     NEFF:    Total channel charge coefficient (default value = 1) Levels 2,4

     XQC:     Coefficient of channel charge share (default value = 0) Levels 2-4
                XQC <= 0.5: Ward-Dutton model of gate capacitance computation
                XQC >  0.5: Meyer model of gate capacitance computation

    Level=3 Electrical Parameters:

     KAPPA:   Saturation field factor (default value = 0.2) Level 3

     ETA:     Static feedback on threshold voltage (default value = 0) Level 3

     THETA:   Mobility modulation (default value = 0 1/Volt) Level 3

    Numerical Parameters:

     EMin:    if x < EMin, the exp(x) function is linearized (default value = -100) Levels 1-4

     EMax:    if x > EMax, the exp(x) function is linearized (default value = 40) Levels 1-4

     GminDC:  Leakage conductance (default value = 1e-12 mho) Levels 0-4

    Compiler Parameters:

     enforceStates:  State selector (default value = true) Levels 0-4
                       enforceStates = true:   Use (external) capacitive voltages as state variables
                       enforceStates = false:  Use (internal) bond graph efforts as state variables

References:

1. Cellier, F.E. (1991), Continuous System Modeling, Springer-Verlag, New York.
2. Massobrio, G. and P. Antognetti (1993), Semiconductor Device Modeling with Spice, 2nd edition, McGraw Hill, New York.

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