BondLib.Semiconductors.Utilities.CjS

# .BondLib.Semiconductors.Utilities.CjS

Junction capacitance model of Ebers-Moll BJT with thermal port

## Information

The junction capacitance source element is a directed TwoPort. It inherits the effort and flow variables from the directed TwoPort. Junction capacitances are used in semiconductor technology to model the charge accumulated in the vicinity of a pn-junction.

The junction capacitance element has its preferred causality away from the element.

The model also computes the diodic current through the junction and puts it out as an output signal.

    Potential variables:

     e1:    Bondgraphic effort variable of inflow

     f1:    Bondgraphic flow variable of inflow, normalized positive for flows into the model

     e2:    Bondgraphic effort variable of outflow

     f2:    Bondgraphic flow variable of outflow, normalized positive for flows out of the model

     id:    Diodic current through the junction (output variable)

    Parameters:

     Is:    Transport saturation current (default value = 1e-16 Amp)

     Tau:   Ideal transit time (default value = 5e-9 sec)

     Cj:    Zero bias depletion capacitance (default value = 0.5e-12 F)

     Phi:   Diffusion voltage (default value = 0.8 Volt)

     M:     Gradation exponent (default value = 0.333)

     EG:    Energy gap for temperature effect on saturation current (default value = 1.11 Volt)

     N:     Current emission coefficient (default value = 1)

     XTI:   Saturation current temperature exponent (default value = 3)

     Gb:    Leakage conductance (default value = 1e-15 Mho)

     EMin:  Minimum exponent (default value = -100)

     EMax:  Maximum exponent (default value = 40)

Generated at 2026-05-12T20:19:03Z by OpenModelicaOpenModelica 1.26.7 using GenerateDoc.mos