BondLib.Semiconductors.Utilities.Cj

# .BondLib.Semiconductors.Utilities.Cj

Junction capacitance model of Ebers-Moll BJT

## Information

The junction capacitance element is a passive OnePort element. It inherits the effort and flow variables from the passive OnePort. Junction capacitances are used in semiconductor technology to model the charge accumulated in the vicinity of a pn-junction.

The junction capacitance element has its preferred causality away from the element.

The model also computes the diodic current through the junction and puts it out as an output signal.

    Potential variables:

     e:     Bondgraphic effort variable

     f:     Bondgraphic flow variable, normalized positive for flows into the model

     id:    Diodic current through the junction (output variable)

    Parameters:

     Is:    Transport saturation current (default value = 1e-16 Amp)

     Tau:   Ideal transit time (default value = 5e-9 sec)

     Cj:    Zero bias depletion capacitance (default value = 0.5e-12 F)

     Phi:   Diffusion voltage (default value = 0.8 Volt)

     M:     Gradation exponent (default value = 0.333)

     Gb:    Leakage conductance (default value = 1e-15 Mho)

     Vt:    Thermal voltage (default value = 0.02585 Volt)

     EMin:  Minimum exponent (default value = -100)

     EMax:  Maximum exponent (default value = 40)

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